page:p2-p1 plastic-encapsulate transistors features ? excellent h fe linearity: ? complementary to ktc3876 maximum ratings ( ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current -continuous i c -0.5 a collector power dissipation p c 0.15 w junction temperature t j 150 storage temperature t stg -55to +150 electrical characteristics ( @ ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -100 a,i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a,i c =0 -5 v collector cut-off current i cbo v cb = -35 v,i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v,i c =0 -0.1 a dc current gain h fe(1) v ce = -1 v,i c = -100 ma 70 400 h fe(2) v ce = -6 v,i c = -400 ma 25 collector-emitter saturation voltage v ce(sat) i c = -100 ma,i b = -10 ma -0.25 v base-emitter voltage v be v ce = -1 v,i c = -100 ma -1 v transition frequency f t v ce = -6 v,i c = -20 ma 200 mhz collector output capacitance c ob v cb = -6 v,i e =0,f= 1 mhz 13 pf classification of h fe rank o y g range 70-140 120-240 200-400 marking azo azy azg KTA1505 (pnp) 1. base 2. emitter sot-23 3. collecto mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors KTA1505 typical characteristics mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
|
